hit a chi igbt module / s ili con n-channel igbt MBM150GR12A pde-m150g r12a-0 [rated 1 50a /1200v , dual-pack type] f e a t u r e s o u t l i n e d r a w i n g unit in mm w e ight ?f 23 0g 6 30 7 12 35 40 0.8 2- 5.6 25 35 4-fast-on terminal #110 17 45 19 20 18.5 80 92 23 23 3-m5 c1 e2 c2e1 g1 e1 e2 g2 ? low satur a tion volt age and high speed. ? low turn-off sw it ching loss. ? low noise due to built-in free-wh eeli ng diode. ( u l t r a s of t and f ast recov e ry d iod e (usfd)) ? high reliability structure. ? isolated heat sink (ter minals to ba se). circuit diagram e1 g 1 g2 e2 c 1 e2 c2e1 absolute maximum ra tings (t c =25c) item sy m b o l unit v a lue coll ector-emitter v o lt age v ce s v 120 0 gate-emitter v o lt age v ges v 20 dc i c 1 5 0 coll ector curre nt 1ms i cp a 300 dc i f 150 *1 fo rw ard c u rren t 1ms i fm a 300 coll ector po w e r dissip a ti on p c w 100 0 junctio n t e mperature t j c -40 ~ + 150 s t orage t e mpe r ature t st g c -40 ~ + 125 isolatio n v o lt ag e v iso v rms 250 0(ac 1 min u te) t e rminals 1.96 *2 scre w t o rque mounti n g - n m 1.96 *3 notes; *1 : rms current of dio de 45 arms *2 ,*3 : recom m end ed val ue 1.67 nm charact e ristics (t c =25c) item sy m b o l unit min. ty p . max . t e st condition s collector-emitter cut-of f current i ce s m a - - 1 . 0 v ce = 1200v , v ge =0 v gate-emitter leaka ge curr en t i ges n a - - 50 0 v ge = 20v , v ce =0 v coll ector-emitter saturatio n v o lt age v ce (sa t ) v - 2 . 2 2 . 8 i c = 150a, v ge = 15v gate-emitter threshold v o lt age v ge( t o) v - - 1 0 v ce =5 v , i c = 150ma input cap a cit a nce c ie s p f - 1 2 0 00 - v ce = 10v , v ge =0v , f=1mhz rise t i me t r - 0 . 1 5 0 . 3 t u rn-on t i me t on - 0 . 3 0 . 6 fall t i me t f - 0 . 1 0 . 3 s w itc h in g t i me s t u rn-of f t i me t of f s - 0 . 5 1 . 0 reverse recover y t i me t rr s - 0.2 0.4 v cc = 600v , i c = 150a r g =8 .2 ? *4 v ge = 15v inductive l o a d i f = 150a peak f o r w ar d v o lt age dr op v fm v - 2.5 3 . 5 i f = 150a, v ge =0 v igb t r t h (j-c) 0 . 1 2 5 t hermal imped ance fwd r t h (j-c) c/w - - 0.30 junction to case notes; *4 : r g value is th e test conditio n ? s va l ue for decis ion of t he s w itc h in g times, not recommend ed v a lue, p l eas e de termine the suit ab le r g value af ter the measurem ent of s w itch in g w a veforms (overs hoot volt a ge, e t c.) w i th ap pli a nce mou n ted. remark; f o r actual ap plic atio n,ple a se confir m this spec.sh eet is the ne w e st revision.
v ge = collector current vs. collector to emitter voltage ic = = collector to emitter voltage vs. gate to emitter voltage 20 15 10 5 0 0 200 400 600 800 1000 typical typical gate to emitter voltage, v ge (v) forward current, i f (a) gate charge, q g (nc) gate charge characteristics 150 300 250 200 50 100 0 012345 forward voltage, v f (v) forward voltage of free-wheeling diode 10 8 6 4 2 0 0 5 10 15 20 typical collector to emitter voltage, v ce (v) gate to emitter voltage, v ge (v) collector to emitter voltage vs. gate to emitter voltage collector to emitter voltage, v ce (v) collector current vs. collector to emitter voltage pde-m150gr12a-0 tc = = = = = = = = = = = = = =
1.5 1 0.5 0 050 100 150 200 typical typical typical switching time, t ( switching time vs. collector current ton toff vcc = = = ? = = = = = switching loss vs. collector current 10 1 0.1 0.01 1 10 100 switching time, t ( ? switching time vs. gate resistance ton toff typical 100 10 1 0.1 1 10 100 switching loss, et on , et off , e rr (mj/pulse) gate resistance. r g ( ? switching loss vs. gate resistance err err eton etoff 10000 1000 100 10 1 0 200 400 600 800 1000 1200 1400 collector current, ic (a) collector to emitter voltage, v ce (v) reverse biased safe operating area etoff eton 1 0.1 0.01 0.001 0.001 0.01 0.1 1 10 transient thermal impedance, r th(j-c) ( transient thermal impedance diode igbt v ge = = ? = = = ? = = = = =
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